k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 3

• Manufacturer Part Number: k9f1608w0a-tcb0
• Description: 2m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1608W0A-TCB0, K9F1608W0A-TIB0
Figure 2. ARRAY ORGANIZATION
Figure 1. FUNCTIONAL BLOCK DIAGRAM
16M : 8K Row
(=512 Block)
NOTE : A12 to A20 : Block Address
2nd Cycle
3rd Cycle
1st Cycle
CE
RE
WE
Command
A
A
8
0
- A
- A
20
I/O 0
7
A
A
A
16
0
8
256B Column
Page Register
& High Voltage
CLE ALE WP
Control Logic
256Byte
I/O 1
A
A
A
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
17
Register
1
9
I/O 2
A
A
A
10
18
2
I/O 3
8B Column
8Byte
A
A
A
11
19
3
I/O 4
3
A
A
A
12
20
4
I/O 0 ~ I/O 7
I/O Buffers & Latches
* : X can be V
I/O 5
A
(256 + 8)Byte x 8192
Page Register & S/A
A
*X
13
5
16M + 512K Bit
8 bit
Global Buffers
NAND Flash
Y-Gating
ARRAY
1 Block(=16 Row)
(4K + 128)Byte
I/O 6
A
1 Page = 264 Byte
1 Block = 264 B x 16 Pages
1 Device = 264B x 16Pages x 512 Blocks
A
*X
14
IL
6
or V
IH
= (4K + 128) Bytes
.
I/O 7
A
= 16.5 Mbits
A
*X
15
7
FLASH MEMORY
Column Address
Row Address
(Page Address)
I/0 0
I/0 7
VccQ
Vss