k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 2

• Manufacturer Part Number: k9f1608w0a-tcb0
• Description: 2m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

NOTE : Connect all V
2M x 8 Bit NAND Flash Memory
FEATURES
K9F1608W0A-TCB0, K9F1608W0A-TIB0
PIN CONFIGURATION
- Memory Cell Array : (2M + 64K)bit x 8bit
- Data Register
- Page Program : (256 + 8)Byte
- Block Erase
- Status Register
- Random Access
- Serial Page Access : 80ns(Min.)
- Program time
- Block Erase time : 2ms (typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
- Forward Type
Organization
Automatic Program and Erase
Fast Write Cycle Time
Command Register Operation
Voltage Supply : 2.7V ~ 5.5V
264-Byte Page Read Operation
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
Do not leave V
CLE
ALE
I/O0
I/O1
I/O2
I/O3
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
WE
WP
V
: (4K + 128)Byte
SS
SS
CC
STANDARD TYPE
CC
: 250 s(typ.)
,VccQ and V
44(40) TSOP (II)
: (256 + 8)bit x8bit
or V
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
: 10 s(Max.)
SS
disconnected.
SS
pins of each device to power supply outputs.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CE
RE
R/B
GND
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
V
CC
CC
Q
2
GENERAL DESCRIPTION
The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Mem-
ory with a spare 64K(65,536)x8bit. Its NAND cell provides the
most cost-effective solution for the solid state mass storage
market. A program operation programs the 264-byte page in
typically 250 s and an erase operation can be performed in typ-
ically 2ms on a 4K-byte block.
Data in the page can be read out at 80ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verify and margin-
ing of data. Even the write-intensive systems can take advan-
tage of the
program/erase cycles by providing either ECC(Error Correction
Code) or real time mapping-out algorithm. These algorithms
have been implemented in many mass storage applications and
also the spare 8bytes of a page combined with the other 256
bytes can be utilized by system-level ECC.
The K9F1608W0A is an optimum solution for large nonvolatile
storage application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility.
PIN DESCRIPTION
I/O0 ~ I/O7
Pin Name
V
GND
CLE
ALE
WE
WP
R/B
V
V
N.C
CE
RE
CC
CC
SS
Q
K9F1608W0A extended reliability of 1,000,000
Data Inputs/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Ground Input
Ready/Busy output
Power(2.7V~5.5V)
Output Butter Power(2.7V~5.5V)
Ground
No Connection
FLASH MEMORY
Pin Function