k9f1608w0a-tcb0 Samsung Semiconductor, Inc., k9f1608w0a-tcb0 Datasheet - Page 24

• Manufacturer Part Number: k9f1608w0a-tcb0
• Description: 2m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1608W0A-TCB0, K9F1608W0A-TIB0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by the following equation.
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
Figure 11. AC Waveforms for Power Transition
V
WP
CC
V
CC
GND
Device
~ 2.5V
open drain output
R/B
High
24
where I
R/B pin.
Rp =
*Note: K9F1608W0A : 5.1V When Vcc=3.6V~5.5V
L
V
is the sum of the input currents of all devices tied to the
CC
(Max.) - V
I
OL
+ I
OL
L
3.2V When Vcc=2.7V~3.6V
(Max.)
FLASH MEMORY
=
~ 2.5V
8mA + I
Note*
L
IL