M29DW128F60NF1

Manufacturer Part NumberM29DW128F60NF1
Description128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
ManufacturerSTMICROELECTRONICS [STMicroelectronics]
M29DW128F60NF1 datasheet
 
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128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
Features summary
Supply Voltage
– V
= 2.7V to 3.6V for Program, Erase and
CC
Read
– V
= 1.65V to 3.6V for Input/Output
CCQ
– V
=12V for Fast Program (optional)
PP
ASYNCHRONOUS RANDOM/PAGE READ
– Page Width: 8 Words
– Page Access: 25, 30ns
– Random Access: 60, 70ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
ERASE VERIFY
MEMORY BLOCKS
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
DUAL OPERATIONS
– While Program or Erase in one bank, Read
in any of the other banks
PROGRAM/ ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM
– Faster Production/Batch Programming
COMMON FLASH INTERFACE
– 64 bit Security Code
100,000 PROGRAM/ERASE CYCLES per
BLOCK
LOW POWER CONSUMPTION
– Standby and Automatic Standby
August 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
M29DW128F
3V Supply, Flash Memory
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
HARDWARE BLOCK PROTECTION
– V
/WP Pin for fast program and write
PP
protect of the four outermost parameter
blocks
SECURITY FEATURES
– Standard Protection
– Password Protection
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
®
ECOPACK
PACKAGES AVAILABLE
PRELIMINARY DATA
Rev 1.0
1/93
www.st.com
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