M29DW128F60NF1 STMICROELECTRONICS [STMicroelectronics], M29DW128F60NF1 Datasheet
M29DW128F60NF1
Manufacturer Part Number
M29DW128F60NF1
Description
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.M29DW128F60NF1.pdf
(93 pages)
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Features summary
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August 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Supply Voltage
– V
– V
– V
ASYNCHRONOUS RANDOM/PAGE READ
– Page Width: 8 Words
– Page Access: 25, 30ns
– Random Access: 60, 70ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
ERASE VERIFY
MEMORY BLOCKS
– Quadruple Bank Memory Array:
– Parameter Blocks (at Top and Bottom)
DUAL OPERATIONS
– While Program or Erase in one bank, Read
PROGRAM/ ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
– Read and Program another Block during
UNLOCK BYPASS PROGRAM
– Faster Production/Batch Programming
COMMON FLASH INTERFACE
– 64 bit Security Code
100,000 PROGRAM/ERASE CYCLES per
BLOCK
LOW POWER CONSUMPTION
– Standby and Automatic Standby
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
Read
16Mbit+48Mbit+48Mbit+16Mbit
in any of the other banks
Suspend
Erase Suspend
CC
CCQ
PP
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
= 1.65V to 3.6V for Input/Output
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HARDWARE BLOCK PROTECTION
– V
SECURITY FEATURES
– Standard Protection
– Password Protection
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
ECOPACK
protect of the four outermost parameter
blocks
store additional information
PP
3V Supply, Flash Memory
/WP Pin for fast program and write
®
PACKAGES AVAILABLE
TSOP56 (NF)
TBGA64 (ZA)
14 x 20mm
10 x 13mm
M29DW128F
BGA
PRELIMINARY DATA
www.st.com
Rev 1.0
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