M29DW128F60NF1 STMICROELECTRONICS [STMicroelectronics], M29DW128F60NF1 Datasheet - Page 53

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M29DW128F60NF1

Manufacturer Part Number
M29DW128F60NF1
Description
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M29DW128F
Table 24.
1. Sampled only, not 100% tested.
Table 25.
1. In Dual operations the Supply Current will be the sum of I
2. Sampled only, not 100% tested.
I
Symbol
CC3
I
CC1
V
V
I
V
V
V
V
I
CC2
V
I
I
PPH
Symbol
LKO
LO
PP
OH
LI
OL
IH
ID
(1)(2)
IL
C
(1)
C
OUT
IN
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout
Supply Voltage
Device Capacitance
DC Characteristics
Input Capacitance
Output Capacitance
Parameter
V
V
PP
PP
Parameter
/WP
/WP
Program
Program
Controller active
Program/Erase
Test Condition
V
V
E = V
RP = V
Test Condition
0V V
E = V
CC
V
CC
CC1
0V V
I
V
I
OH
OUT
OL
IN
f = 6MHz
= 2.7V ±10%
=2.7V ±10%
(read) and I
= –100
IL
= 0V
= 1.8mA
CC
OUT
= 0V
, G = V
CC
IN
±0.2V,
±0.2V
V
V
V
V
CC
V
µ
CC
A
PP
PP
IL
IH
V
CC3
,
/WP =
or V
/WP =
PPH
(program/erase).
IH
Min
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
10 DC and AC parameters
Max
12
6
V
(1)
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
pF
pF
Unit
mA
mA
mA
mA
µ
µ
µ
53/93
V
V
V
V
V
V
V
A
A
A

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