S29GL256S90DHI023 Spansion, S29GL256S90DHI023 Datasheet - Page 32

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S29GL256S90DHI023

Manufacturer Part Number
S29GL256S90DHI023
Description
Flash 256M, 3V, 90ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256S90DHI023

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Eclipse
Timing Type
Asynchronous
Interface Type
CFI
Access Time
90 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
60 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 128
32
5.3.3
5.3.4
5.3.4.1
Blank Check
Erase Methods
Program operations can be interrupted as often as necessary but in order for a program operation to progress
to completion there must be some periods of time between resume and the next suspend command greater
than or equal to t
Program suspend and resume is not supported while entered in an ASO. While in program suspend entry into
ASO is not supported.
The Blank Check command will confirm if the selected main flash array sector is erased. The Blank Check
command does not allow for reads to the array during the Blank Check. Reads to the array while this
command is executing will return unknown data.
To initiate a Blank Check on a Sector, write 33h to address 555h in the Sector, while the EAC is in the
standby state
The Blank Check command may not be written while the device is actively programming or erasing or
suspended.
Use the Status Register read to confirm if the device is still busy and when complete if the sector is blank or
not. Bit 7 of the Status Register will show if the device is performing a Blank Check (similar to an erase
operation). Bit 5 of the Status Register will be cleared to 0 if the sector is erased and set to 1 if not erased.
As soon as any bit is found to not be erased, the device will halt the operation and report the results.
Once the Blank Check is completed, the EAC will return to the Standby State.
Chip Erase
The chip erase function erases the entire main Flash Memory Array. The device does not require the system
to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire
memory for an all 0 data pattern prior to electrical erase. After a successful chip erase, all locations within the
device contain FFFFh. The system is not required to provide any controls or timings during these operations.
The chip erase command sequence is initiated by writing two unlock cycles, followed by a set up command.
Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the
Embedded Erase algorithm. When WE# goes high, at the end of the 6th cycle, the RY/BY# goes low.
When the Embedded Erase algorithm is complete, the EAC returns to the standby state. Note that while the
Embedded Erase operation is in progress, the system can not read data from the device. The system can
determine the status of the erase operation by reading RY/BY#, the Status Register or using Data Polling.
Refer to
on page 38
Once the chip erase operation has begun, only a Status Read, Hardware RESET or Power cycle are valid. All
other commands are ignored. However, a Hardware Reset or Power Cycle immediately terminates the erase
operation and returns to read mode after t
command sequence must be reinitiated once the device has returned to the idle state to ensure data integrity.
See
Operations on page 89
Sectors protected by the ASP DYB and PPB lock bits will not be erased. See
protected during chip erase, chip erase will skip the protected sector and continue with next sector erase. The
status register erase status bit and sector lock bit are not set to 1 by a failed erase on a protected sector.
Table 5.4 on page
Status Register on page 37
for more information.
PRS
in
46,
Embedded Algorithm Controller (EAC) on page
for parameters and timing diagrams.
Asynchronous Write Operations on page 83
GL-S MirrorBit
for information on these status bits. Refer to
RPH
D a t a
time. If a chip erase operation is terminated, the chip erase
®
Family
S h e e t
S29GL_128S_01GS_00_07 December 21, 2012
25.
and
Alternate CE# Controlled Write
ASP on page
Data Polling Status
19. If a sector is

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