S29GL256S90DHI023 Spansion, S29GL256S90DHI023 Datasheet - Page 86

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S29GL256S90DHI023

Manufacturer Part Number
S29GL256S90DHI023
Description
Flash 256M, 3V, 90ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256S90DHI023

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Eclipse
Timing Type
Asynchronous
Interface Type
CFI
Access Time
90 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
60 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 128
86
Notes:
1. Not 100% tested.
2. Upon the rising edge of WE#, must wait t
3. See
JEDEC
t
t
WHWH1
WHWH2
Table 5.4 on page 46
Parameter
DQ15-DQ0
Amax-A0
t
t
WHWH1
WHWH2
t
t
BUSY
SR/W
t
t
Std
t
ESL
PSL
RB
WE#
OE#
CE#
Figure 10.13 Read to Write (CE# Toggle) Operation Timing Diagram
Write Buffer Program Operation
Effective Write Buffer Program Operation per Word
Program Operation per Word or Page
Sector Erase Operation
Erase/Program Valid to RY/BY# Delay
Latency between Read and Write operations
Erase Suspend Latency
Program Suspend Latency
RY/BY# Recovery Time
and
Table 5.5 on page 47
GL-S MirrorBit
SR/W
Table 10.8 Erase/Program Operations
before switching to another address.
Description
(Note 1)
tACC
tCE
for specific values.
D a t a
®
Family
S h e e t
tOE
(Note 2)
S29GL_128S_01GS_00_07 December 21, 2012
tDF
tDF
tGHWL
tOH
tOH
tOH
Max
Max
Max
Typ
Typ
Typ
Typ
Min
Min
tAS
tCS
tDS
tWP
V
IO
to V
tAH
= 2.7V
CC
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
80
10
0
tCH
tDH
V
IO
to V
= 1.65V
CC
Unit
ms
µs
µs
µs
ns
ns
µs
µs
µs

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