S29GL256S90DHI023 Spansion, S29GL256S90DHI023 Datasheet - Page 87

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S29GL256S90DHI023

Manufacturer Part Number
S29GL256S90DHI023
Description
Flash 256M, 3V, 90ns Parallel NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S29GL256S90DHI023

Rohs
yes
Data Bus Width
16 bit
Memory Type
NOR Flash
Memory Size
256 Mbit
Architecture
Eclipse
Timing Type
Asynchronous
Interface Type
CFI
Access Time
90 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
60 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
FBGA-64
Organization
128 KB x 128
December 21, 2012 S29GL_128S_01GS_00_07
Note:
1. PA = program address, PD = program data, D
Note:
1. SA = sector address (for sector erase), VA = valid address for reading status data.
Addresses
Addresses
RY/BY#
RY/BY#
WE#
Data
OE#
CE#
WE#
Data
OE#
CE#
Program Command Sequence (last two cycles)
t
CS
t
Erase Command Sequence (last two cycles)
CS
Figure 10.15 Chip/Sector Erase Operation Timing Diagram
555h
D a t a
2AAh
t
WC
t
WC
Figure 10.14 Program Operation Timing Diagram
t
WP
t
DS
t
WP
55h
t
GL-S MirrorBit
DS
A0h
t
S h e e t
CH
t
DH
OUT
t
t
CH
DH
555h for chip erase
is the true data at the program address.
t
WPH
t
WPH
t
AS
t
PA
AS
SA
®
Family
10 for Chip Erase
t
AH
t
PD
AH
30h
t
BUSY
t
BUSY
t
WHWH1
Read Status Data (last two cycles)
Read Status Data (last two cycles)
t
WHWH2
PA
Status
VA
Progress
In
D
OUT
PA
VA
Complete
t
RB
t
RB
87

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