S29GL256S90DHI023 Spansion, S29GL256S90DHI023 Datasheet - Page 47

• Manufacturer Part Number: S29GL256S90DHI023
• Description: Flash 256M, 3V, 90ns Parallel NOR Flash
• Manufacturer: Spansion

Specifications of S29GL256S90DHI023

• Rohs: yes
• Data Bus Width: 16 bit
• Memory Type: NOR Flash
• Memory Size: 256 Mbit
• Architecture: Eclipse
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 90 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 60 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: FBGA-64
• Organization: 128 KB x 128

December 21, 2012 S29GL_128S_01GS_00_07
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25°C, 3.0V V
3. Under worst case conditions of 105°C, V
4. Effective write buffer specification is based upon a 512-byte write buffer operation.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.
6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See
Sector Erase Time 128 kbyte
Single Word Programming Time
Buffer Programming Time
Effective Write Buffer Program
Operation per Word
Sector Programming Time 128 kB (full Buffer
Programming)
Erase Suspend/Erase Resume (t
Program Suspend/Program Resume (t
Erase Resume to next Erase Suspend (t
Program Resume to next Program Suspend (t
Blank Check
NOP (Number of Program-operations, per Line)
Definitions on page 57
Parameter
for further information on command definitions.
Table 5.5 Embedded Algorithm Characteristics (-40°C to +105°C)
D a t a
(Note 1)
ESL
)
2-byte
32-byte
64-byte
128-byte
256-byte
512-byte
512-byte
PSL
ERS
)
CC
GL-S MirrorBit
)
S h e e t
(Note 1)
(Note 1)
(Note 1)
PRS
= 2.70V, 100,000 cycles, and a random data pattern.
(Note 1)
(Note 1)
)
Typ
®
Family
1.64
(Note 2)
275
125
150
200
220
250
320
420
108
100
100
7.6
1 per 16 word
Max
1100
1050
1050
1050
1050
1050
1050
400
269
(Note 3)
9.0
CC
50
50
, 10,000 cycle, and a random data pattern.
Unit
ms
ms
ms
µs
µs
µs
µs
µs
µs
µs
Includes pre-programming prior
to erasure
(Note 6)
Minimum of 60 ns but ≥ typical
periods are needed for Erase to
progress to completion.
Minimum of 60 ns but ≥ typical
periods are needed for Program
to progress to completion.
Table 6.1, Command
Comments
(Note 5)
47