FDMA8878 Fairchild Semiconductor, FDMA8878 Datasheet

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FDMA8878

Manufacturer Part Number
FDMA8878
Description
MOSFET N-CHAN 30V 9A 2.4W
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMA8878

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
9 A
Resistance Drain-source Rds (on)
16 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MicroFET 2 x 2
Minimum Operating Temperature
- 55 C
Power Dissipation
2.4 W

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©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA8878
Single N-Channel Power Trench
30 V, 9.0 A, 16 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
High performance trench technology for extremely low r
Fast switching speed
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
878
Drain
= 16 mΩ at V
= 19 mΩ at V
Pin 1
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2X2 (Bottom View)
D
GS
GS
D
D
= 10 V, I
= 4.5 V, I
-Pulsed
FDMA8878
-Continuous
Device
D
S
D
D
= 9.0 A
= 8.5 A
G
T
A
= 25 °C unless otherwise noted
Parameter
Source
MicroFET 2x2
DS(on)
Package
®
1
MOSFET
T
T
T
T
C
A
A
General Description
This
Semiconductor‘s advanced Power Trench
been optimized for r
Application
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC/DC Buck Converters
Load Switch in NB
Notebook Battery Power Management
N-Channel
Reel Size
7 ’’
D
G
D
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
DS(on)
MOSFET
Bottom Drain Contact
, switching performance.
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
±20
145
9.0
2.4
0.9
30
10
40
52
®
process that has
www.fairchildsemi.com
D
S
D
3000 units
Quantity
May 2012
Units
°C/W
°C
W
V
V
A

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FDMA8878 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 878 FDMA8878 ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C ® MOSFET General Description = 9.0 A This N-Channel D Semiconductor‘s advanced Power Trench = 8 been optimized for r ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev °C unless otherwise noted J Test Conditions = 250 μA, V ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev 25°C unless otherwise noted 3 μ ...

Page 4

... Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.005 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev 25°C unless otherwise noted J 1000 = 10 V 100 = 100 100 ...

Page 5

... PIN #1 IDENT 1 0.33 0.20 6 0.65 A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Lrev2. ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev. C 2.000 2.000 0. RECOMMENDED LAND PATTERN OPT 1 (0.20) C (0.30) 1.000 0.800 3 (0.56) 1 ...

Page 6

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev. C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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