FDMA8878 Fairchild Semiconductor, FDMA8878 Datasheet - Page 2

• Manufacturer Part Number: FDMA8878
• Description: MOSFET N-CHAN 30V 9A 2.4W
• Manufacturer: Fairchild Semiconductor

Specifications of FDMA8878

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 16 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MicroFET 2 x 2
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.4 W

©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
θJC
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
is guaranteed by design while R
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
θCA
Parameter
is determined by the user's board design.
T
J
= 25 °C unless otherwise noted
a. 52 °C/W when mounted
on a 1 in
2
pad of 2 oz copper.
I
I
V
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 9.0 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 24 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
2
DS
Test Conditions
, I
S
S
D
D
D
= 2.0 A
= 9.0 A
D
D
GS
DS
GS
GEN
GS
D
= 9.0 A
= 9.0 A,
= 250 μA
= 9.0 A
= 9.0 A, T
= 8.5 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= 9.0 A
= 15 V
J
= 125 °C
(Note 2)
(Note 2)
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
Min
1.2
30
0.75
0.86
Typ
539
172
8.5
4.1
1.6
1.2
1.8
1.3
16
24
14
26
13
16
17
41
-5
4
6
2
2
Max
720
230
5.8
1.2
1.2
www.fairchildsemi.com
100
3.0
12
10
25
10
12
28
10
35
16
19
21
1
mV/°C
mV/°C
Units
mΩ
nC
pF
nC
nC
nC
nC
μA
nA
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S