FDMA8878 Fairchild Semiconductor, FDMA8878 Datasheet - Page 3

• Manufacturer Part Number: FDMA8878
• Description: MOSFET N-CHAN 30V 9A 2.4W
• Manufacturer: Fairchild Semiconductor

Specifications of FDMA8878

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 16 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MicroFET 2 x 2
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.4 W

©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
Typical Characteristics
40
30
20
10
40
32
24
16
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
8
0
Figure 3. Normalized On Resistance
1.5
Figure 1.
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DD
I
V
-50
= 5 V
D
vs Junction Temperature
GS
= 9 A
2.0
V
V
= 10 V
T
GS
DS
V
-25
J
On Region Characteristics
,
GS
, GATE TO SOURCE VOLTAGE (V)
1
,
JUNCTION TEMPERATURE
DRAIN TO SOURCE VOLTAGE (V)
V
= 4 V
GS
T
0
J
= 4.5 V
V
= 125
2.5
GS
25
= 10 V
μ
s
o
2
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
50
T
3.0
J
T
= 25°C unless otherwise noted
J
= -55
75
T
J
= 25
3
o
(
100 125 150
o
C
3.5
C
V
)
GS
V
o
C
GS
= 3.5 V
= 3 V
μ
s
4.0
4
3
0.001
0.01
100
0.1
10
60
50
40
30
20
10
6
5
4
3
2
1
0
Figure 2.
Figure 4.
1
0.2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
GS
V
V
T
GS
T
= 0 V
SD
J
J
= 125
, BODY DIODE FORWARD VOLTAGE (V)
= 25
= 3 V
0.4
V
Normalized On-Resistance
8
On-Resistance vs Gate to
GS
Source Voltage
Source to Drain Diode
o
4
,
C
o
GATE TO SOURCE VOLTAGE (V)
C
I
D
,
I
D
DRAIN CURRENT(A)
0.6
16
= 9 A
T
J
= 125
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
0.8
V
V
J
24
GS
o
GS
= -55
C
T
J
= 4.5 V
= 3.5 V
= 25
o
V
C
GS
8
o
1.0
C
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= 4 V
32
V
GS
= 10 V
μ
μ
1.2
s
s
40
10