FDMA3027PZ Fairchild Semiconductor, FDMA3027PZ Datasheet

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FDMA3027PZ

Manufacturer Part Number
FDMA3027PZ
Description
MOSFET -30V Dual P-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMA3027PZ

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
- 3.3 A
Resistance Drain-source Rds (on)
87 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MicroFET 2 x 2
Minimum Operating Temperature
- 55 C
Power Dissipation
1.4 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA3027PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMA3027PZ
Quantity:
600
Company:
Part Number:
FDMA3027PZ
Quantity:
9 000
©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C
FDMA3027PZ
Dual P-Channel PowerTrench
-30 V, -3.3 A, 87 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
D
DS
GS
D
J
θJA
Max r
Max r
HBM ESD protection level > 2 KV typical (Note 3)
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
327
= 87 mΩ at V
= 152 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Top
GS
MicroFET 2x2
GS
FDMA3027PZ
= -10 V, I
= -4.5 V, I
-Pulsed
Device
PIN 1
D
= -3.3 A
D
= -2.3 A
T
D1
A
S1
= 25 °C unless otherwise noted
D1
Bottom
Parameter
G2
G1
®
MicroFET 2X2
S2
D2
Package
MOSFET
D2
1
General Description
This device is designed specifically as a single package solution
for dual switching requirements such as gate driver for larger
Mosfets. It features two independent P-Channel MOSFETs with
low on-state resistance for minimum conduction losses. The
MicroFET 2x2 package offers exceptional thermal performance
for its physical size and is well suited to linear mode applications.
G-S zener has been added to enhance ESD voltage level.
Applications
Load Switch
Discrete Gate Driver
Reel Size
7 ’’
G1
S1
D2
(Note 1a)
(Note 1b)
(Note 1d)
(Note 1e)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1f)
1
2
3
Tape Width
8 mm
-55 to +150
Ratings
-3.3
173
151
160
133
±25
-30
-15
1.4
0.7
86
69
6
5
4
June 2012
www.fairchildsemi.com
D1
G2
S2
3000 units
Quantity
Units
°C/W
°C
W
V
V
A

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FDMA3027PZ Summary of contents

Page 1

... Thermal Resistance for Dual Operation, Junction to Ambient Package Marking and Ordering Information Device Marking Device 327 FDMA3027PZ ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C ® MOSFET General Description This device is designed specifically as a single package solution = -3 for dual switching requirements such as gate driver for larger = -2 ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev °C unless otherwise noted J Test Conditions = -250 μ -250 μA, referenced to 25 ° ...

Page 3

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev °C unless otherwise noted ...

Page 4

... T = 150 - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev °C unless otherwise noted -4 -3 μ 400 300 200 100 ...

Page 5

... Figure 9. Gate Leakage Current vs Gate to Source Voltage 30 10 SINGLE PULSE 173 C/W 1 θ 0 Figure 11. ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev °C unless otherwise noted J 1000 100 0 0. ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0. Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev °C unless otherwise noted J SINGLE PULSE 173 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 7

... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMA3027PZ Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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