FDMA3027PZ Fairchild Semiconductor, FDMA3027PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA3027PZ
• Description: MOSFET -30V Dual P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMA3027PZ

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 3.3 A
• Resistance Drain-source Rds (on): 87 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MicroFET 2 x 2
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.4 W

©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
= -3.3 A, di/dt = 100 A/μs
= -250 μA, V
= -250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= -24 V, V
= -5 V, I
= -15 V, V
= 0 V to -10 V
= 0 V to -5 V
= 0 V, I
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -15 V, I
= -10 V, R
DS
Test Conditions
2
, I
S
D
D
= -3.3 A
D
D
D
D
= -3.3 A
= -250 μA
GS
GS
GEN
GS
DS
= -3.3 A
= -3.3 A, T
= -3.3 A,
= -2.3 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= -3.3 A
= -15 V,
J
= 125 °C
(Note 2)
Min
-30
-1
-0.94
-1.9
324
Typ
108
-22
59
53
12
5.2
7.2
4.1
1.0
1.9
69
97
20
10
17
11
5
6
3
Max
152
122
435
-1.3
±10
87
80
80
32
18
-3
10
31
25
10
-1
11
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6
mV/°C
mV/°C
Units
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V