FDMA3027PZ Fairchild Semiconductor, FDMA3027PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA3027PZ
• Description: MOSFET -30V Dual P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMA3027PZ

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 3.3 A
• Resistance Drain-source Rds (on): 87 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MicroFET 2 x 2
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.4 W

©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C
Typical Characteristics
Figure 9.
10
10
10
10
10
10
10
10
10
10
Figure 7.
8
6
4
2
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.5
30
10
0
0
1
10
I
D
V
-3
= -3.3 A
DS
SINGLE PULSE
R
T
= 0 V
A
θ
4
Gate Leakage Current vs Gate to
JA
= 25
-V
= 173
Gate Charge Characteristics
GS ,
o
Source Voltage
2
C
8
Q
GATE TO SOURCE VOLTAGE (V)
o
g
C/W
, GATE CHARGE (nC)
T
V
12
J
DD
= 125
10
= -10 V
-2
Figure 11.
4
16
o
C
V
DD
T
J
= -15 V
T
= 25 °C unless otherwise noted
20
J
= 25
6
o
24
Single Pulse Maximum Power Dissipation
C
V
DD
10
= -20 V
-1
28
t, PULSE WIDTH (sec)
8
32
5
1
0.01
1000
0.1
100
20
10
10
1
0.1
0.1
THIS AREA IS
LIMITED BY r
f = 1 MHz
V
Figure 8.
GS
Figure 10.
= 0 V
-V
-V
10
DS
DS
SINGLE PULSE
T
R
T
to Source Voltage
J
A
θ
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
JA
= MAX RATED
= 25
DS(on)
Operating Area
Capacitance vs Drain
= 173
1
o
Forward Bias Safe
C
o
1
C/W
100
10
C
C
C
iss
oss
rss
10
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100 ms
10 s
10 ms
1 s
DC
1 ms
1000
100
30