IRF740B_Q Fairchild Semiconductor, IRF740B_Q Datasheet - Page 3

• Manufacturer Part Number: IRF740B_Q
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRF740B_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 0.54 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 85 ns
• Forward Transconductance Gfs (max / Min): 3.5 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 134 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 125 ns

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
5
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
15
C
C
C
iss
rss
oss
V
GS
20
= 20V
V
GS
= 10V
C
C
C
※ Notes :
25
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
30
J
GS
ds
= 25℃
= shorted)
= 0 V
35
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
5
o
Variation with Source Current
C
0.4
o
C
150℃
10
4
0.6
V
V
and Temperature
Q
GS
SD
15
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
, Total Gate Charge [nC]
25℃
DS
-55
= 320V
V
o
0.8
DS
C
20
= 200V
V
DS
6
= 80V
25
1.0
30
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
35
= 40V
= 0V
D
1.4
= 10 A
40
Rev. A, November 2001
1.6
10
45