IRF740B_Q Fairchild Semiconductor, IRF740B_Q Datasheet - Page 5

• Manufacturer Part Number: IRF740B_Q
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRF740B_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 0.54 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 85 ns
• Forward Transconductance Gfs (max / Min): 3.5 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 134 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 125 ns

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS740B
- 1
- 2
- 1
- 2
Figure 11-1. Transient Thermal Response Curve for IRF740B
0
1 0
0
1 0
- 5
- 5
D = 0 .5
0 . 0 2
D = 0 .5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 0 1
0 . 0 5
0 . 2
0 . 2
0 . 1
0 . 1
1 0
1 0
(Continued)
s in g le p u ls e
- 4
- 4
s in g le p u ls e
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※ N o te s :
1 0
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
※ N o te s :
- 1
- 1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
P
θ J C
J M
DM
DM
θ J C
J M
- T
(t) = 0 .9 3 ℃ /W M a x .
- T
C
(t) = 2 .8 6 ℃ /W M a x .
= P
C
= P
t
t
D M
1
1
t
t
1 0
1 0
D M
2
2
* Z
0
* Z
0
1
θ J C
/t
2
1
θ J C
/t
(t)
2
(t)
1 0
1 0
1
1
Rev. A, November 2001