IRF740B_Q Fairchild Semiconductor, IRF740B_Q Datasheet - Page 4

• Manufacturer Part Number: IRF740B_Q
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRF740B_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 0.54 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 85 ns
• Forward Transconductance Gfs (max / Min): 3.5 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 134 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 125 ns

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
Figure 9-1. Maximum Safe Operating Area
10
1.2
1.1
1.0
0.9
0.8
10
10
10
8
6
4
2
0
25
-100
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
vs Temperature
T
J
, Junction Temperature [
DS
C
10
, Case Temperature [ ℃ ]
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
for IRF740B
1
※ Notes :
75
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
DS(on)
o
C
o
C
DC
100
10 ms
100
10
(Continued)
1 ms
2
o
C]
※ Notes :
1. V
2. I
100 s
125
D
G S
= 250 μ A
= 0 V
150
10 s
150
200
10
3
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
vs Temperature
for IRFS740B
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DS(on)
DC
50
o
C
o
C
100 ms
10 ms
100
10
o
1 ms
2
C]
100 s
※ Notes :
1. V
2. I
150
D
GS
= 5.0 A
= 10 V
Rev. A, November 2001
200
10
3