M29W640GT70NA6E NUMONYX, M29W640GT70NA6E Datasheet - Page 38

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M29W640GT70NA6E

Manufacturer Part Number
M29W640GT70NA6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GT70NA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 7.
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. Addresses differ in x8 mode.
5. See
38/90
of status register data polling bit.
Table 19: Write AC characteristics
Chip enable controlled program waveforms (8-bit mode)
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
W
G
E
tAVAV
tWLEL
tGHEL
tDVEH
tELEH
and
3rd cycle
Table 18: Read AC characteristics
tAVEL
555h
AOh
4th cycle
tEHWH
tEHDX
PA
tEHEL1
PD
tELAX
tWHWH1
Section 5.1: Data polling bit
Data Polling
PA
DQ7 D OUT
for details on the timings.
(DQ7)).
AI12780

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