M29W640GT70NA6E NUMONYX, M29W640GT70NA6E Datasheet - Page 77

• Manufacturer Part Number: M29W640GT70NA6E
• Description: IC FLASH 64MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640GT70NA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 34.
1. For bottom boot devices, erase block region 1 is located from address 000000h to 007FFFh and erase block region 2 from
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
x16
27h
28h
29h
30h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
address 008000h to 3FFFFFh.
For top boot devices, erase block region 1 is located from address 000000h to 3F7FFFh and erase block region 2 from
address 3F8000h to 3FFFFFh.
Address
4Eh
5Ah
5Ch
5Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
Device geometry definition
M29W640GH,
M29W640GH,
M29W640GT,
M29W640GT,
M29W640GT,
M29W640GB
M29W640GB
M29W640GB
M29W640GL
M29W640GL
only
0017h
0002h
0000h
0005h
0000h
Data
007Eh
0001h Number of erase block regions. It specifies the number of
0002h
007Fh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Device size = 2
Flash device interface code description
Maximum number of bytes in multi-byte program or page =
2
regions containing contiguous Erase blocks of the same
size.
Region 1 information
Number of erase blocks of identical size = 007Fh+1
Region 1 information
Block size in region 1 = 0100h * 256 byte
Region 1 information
Number of erase blocks of identical size = 0007h+1
Region 1 information
Block size in region 1 = 0020h * 256 byte
Region 2 information
Number of erase blocks of identical size= 007Eh+1
Region 2 information
Block size in region 2 = 0100h * 256 byte
Region 3 information
Number of erase blocks of identical size=007Fh+1
Region 3 information
Block size in region 3 = 0000h * 256 byte
Region 4 information
Number of erase blocks of identical size=007Fh+1
Region 4 information
Block size in region 4 = 0000h * 256 byte
n
(1)
n
in number of bytes
Description
64 Kbytes
64 Kbytes
8 Mbytes
8 Kbytes
32 bytes
x8, x16
async.
Value
128
127
1
2
8
0
0
0
0
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