M29W640GT70NA6E NUMONYX, M29W640GT70NA6E Datasheet - Page 60

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M29W640GT70NA6E

Manufacturer Part Number
M29W640GT70NA6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GT70NA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 25. FBGA64 11 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package outline, bottom view
Table 26.
60/90
Symbol
ddd
FD
SD
SE
A1
A2
D1
E1
FE
D
A
E
b
e
1. Drawing is not to scale.
FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data
E
11.00
0.48
0.80
7.00
1.00
13.0
7.00
2.00
3.00
0.50
0.50
Typ
BALL "A1"
FD
E1
FE
A
millimeters
10.90
12.90
e
0.43
0.55
Min
D1
D
SD
11.10
13.10
Max
1.40
0.53
0.65
0.15
b
A1
SE
0.0196
0.0196
0.018
0.031
0.433
0.275
0.039
0.275
0.078
0.511
0.118
Typ
A2
inches
0.016
0.021
0.429
0.507
Min
BGA-Z23
ddd
0.0059
0.055
0.025
0.437
0.515
Max

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