M29W640GT70NA6E NUMONYX, M29W640GT70NA6E Datasheet - Page 42

• Manufacturer Part Number: M29W640GT70NA6E
• Description: IC FLASH 64MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640GT70NA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13.
1. Unspecified data bits should be ignored.
42/90
Program
Program During Erase
Suspend
Write to Buffer and
Program Abort
Write to Buffer and
Program
Program Error
Chip Erase
Block Erase before
timeout
Block Erase
Erase Suspend
Erase Error
Operation
Status register bits
Faulty block address
Good block address
Non-erasing block
Non-erasing block
Non-erasing block
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Any address
Address
(1)
DQ7
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data read as normal
DQ5
0
0
0
0
1
0
0
0
0
1
0
0
1
DQ3
–
–
–
–
–
1
0
0
1
1
–
1
1
No Toggle
No Toggle
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ2
–
–
–
–
–
DQ1
0
–
1
0
–
–
–
–
–
–
–
–
–
–
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0
0