M29W640GT70NA6E NUMONYX, M29W640GT70NA6E Datasheet - Page 39

• Manufacturer Part Number: M29W640GT70NA6E
• Description: IC FLASH 64MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640GT70NA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 8.
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BA and 30h for a Block
2. BA is the block address.
3. See
Erase command.
Table 19: Write AC characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Chip/block erase waveforms (8-bit mode)
tGHWL
tAVAV
tELWL
tWLWH
tDVWH
tAVWL
555h
AAh
and
Table 18: Read AC characteristics
tWHEH
tWHDX
2AAh
tWHWL
55h
tWLAX
555h
80h
555h
AAh
2AAh
for details on the timings.
55h
555h/BA
(1)
10h/
30h
AI12781
39/90