MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 12

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 8:
Figure 9:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
DQ[15:0]
Burst Mode READ (4-word Burst)
DQ[15:0]
Burst Mode WRITE (4-word Burst)
LB#/UB#
LB#/UB#
A[21:0]
A[21:0]
ADV#
ADV#
WAIT
WAIT
WE#
WE#
OE#
CLK
OE#
CE#
CLK
CE#
Note:
Note:
WRITE Burst Identified
READ Burst Identified
Non-default BCR settings for burst mode READ (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
Non-default BCR settings for burst mode WRITE (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
ADDRESS
(WE# = LOW)
ADDRESS
(WE# = HIGH)
VALID
VALID
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latency Code 2 (3 clocks)
Latency Code 2 (3 clocks)
12
D[0]
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[1]
DON’T CARE
D[2]
D[2]
Bus Operating Modes
©2003 Micron Technology, Inc. All rights reserved.
UNDEFINED
DON’T CARE
D[3]
D[3]