MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 37

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Timing Diagrams
Figure 26:
Table 18:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Initialization Period (required before normal operations)
Initialization Timing Parameters
Initialization Period
Vcc, VccQ = 1.70V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
37
t
PU
Symbol
t
PU
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
-70x
normal operation
Device ready for
Max
150
Vcc (MIN)
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
-856
Max
150
Units
µs