MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 54

IC PSRAM 64MBIT 70NS 54VFBGA

MT45W4MW16BFB-706 WT TR

Manufacturer Part Number
MT45W4MW16BFB-706 WT TR
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W4MW16BFB-706 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 43:
Table 37:
Table 38:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
AW
BW
CKA
CW
DH
DW
ABA
ACLK
BOE
CBPH
CEW
CLK
DQ[15:0]
LB#/UB#
A[21:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
Asynchronous WRITE Timing Parameters – ADV# LOW
Burst READ Timing Parameters
Asynchronous WRITE Followed By Burst READ – ADV# LOW
Min
Min
12.5
70
70
70
70
23
0
5
1
High-Z
VALID ADDRESS
t WHZ
-70x
-708
Notes: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ—ADV# LOW:
t CW
t WC
t WP
Max
Max
46.5
DATA
7.5
20
20
9
t DH
t WPH
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
3. Clock rates below 50 MHz (
t WC
VALID ADDRESS
Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
t AW
t BW
Min
Min
t DW
85
85
85
85
23
15
DATA
0
5
1
-706/-856
t WC
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
-856
t WR
Max
Max
7.5
56
11
20
20
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t CKA
t CBPH
Units
Units
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t CSP
V
V
t SP
t SP
ADDRESS
OH
OL
t SP
t SP t HD
VALID
t CEW
t HD
t HD
t HD
t
54
High-Z
t CLK
CLK > 20ns) are allowed as long as
Symbol
t
t
t
t
t
Symbol
t
t
t
t
t
t ABA
WC
WHZ
WP
WPH
WR
CSP
HD
KOH
OHZ
SP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t ACLK
t BOE
OUTPUT
VALID
Min
Min
4.5
70
46
10
0
2
2
3
t KOH
-708
-70x
OUTPUT
VALID
Max
Max
20
8
8
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
OUTPUT
VALID
Min
Min
Timing Diagrams
85
55
10
0
-706/-856
5
2
2
3
-856
OUTPUT
VALID
Max
Max
20
8
8
UNDEFINED
t OHZ
High-Z
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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