MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 38

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 27:
Table 19:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
AA
BA
BHZ
BLZ
CEW
CO
Asynchronous READ Timing Parameters
Asynchronous READ
Min
10
1
-70x
Max
7.5
70
70
70
8
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CE#
Min
10
1
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
-856
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
Max
7.5
85
85
85
8
High-Z
t CEW
High-Z
Units
ns
ns
ns
ns
ns
ns
t LZ
t BLZ
t AA
38
t OLZ
VALID ADDRESS
t CO
t BA
Symbol
t
t
t
t
t
t
HZ
LZ
OE
OHZ
OLZ
RC
t RC
t OE
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID OUTPUT
t HZ
Min
10
70
5
t HZ
t OHZ
t BHZ
UNDEFINED
-70x
High-Z
Max
20
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
10
85
5
-856
Max
20
8
8
Units
ns
ns
ns
ns
ns
ns