MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 28

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Table 7:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Voltage to Any Ball Except V
Voltage on V
Voltage on V
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time
Wireless (see Note 1)
Industrial
10s (solder ball only)
CC
CC
Absolute Maximum Ratings
Q Supply Relative to V
Supply Relative to V
Notes: 1. -30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
, V
CC
Q Relative to V
SS
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
SS
SS
28
-0.50V to (4.0V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-55°C to +150°C
-0.2V to +2.45V
-30°C to +85°C
-40°C to +85°C
-0.2V to +4.0V
Electrical Characteristics
CC
Rating
+260°C
Q + 0.3V, whichever is less)
©2003 Micron Technology, Inc. All rights reserved.