MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 46

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 35:
Table 27:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
AS
AW
BW
CEW
CPH
CW
DH
DW
Asynchronous WRITE Timing Parameters – CE#-Controlled
CE#-Controlled Asynchronous WRITE
Min
70
70
70
23
0
1
5
0
-70x
Max
DQ[15:0]
DQ[15:0]
7.5
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OUT
OE#
CE#
IN
Min
85
85
85
23
0
1
5
0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
IH
IL
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
-856
Max
7.5
t AS
High-Z
t LZ
t WPH
t CEW
High-Z
Units
νσ
ns
ns
ns
ns
ns
ns
ns
t WHZ
46
t AW
t CW
t WC
VALID ADDRESS
t BW
Symbol
t
t
t
t
t
t
t
HZ
LZ
WC
WHZ
WP
WPH
WR
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID INPUT
t DW
t HZ
Min
10
70
46
10
0
t WR
t DH
-70x
DON’T CARE
t CPH
High-Z
Max
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
Timing Diagrams
10
85
55
10
0
-856
Max
8
8
Units
ns
ns
ns
ns
ns
ns
ns