MT45W4MW16BFB-706 WT TR Micron Technology Inc, MT45W4MW16BFB-706 WT TR Datasheet - Page 31

• Manufacturer Part Number: MT45W4MW16BFB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 23:
Table 11:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Description
Deep Power-Down
70
60
50
40
30
20
10
0
-30
Deep Power-Down Specifications
Typical Refresh Current vs. Temperature (I
-20
-10
Note:
0
Typical I
10
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
V
IN
SB
Temperature (°C)
= V
20
currents for each PAR setting with the appropriate TCR selected.
Conditions
CC
Q or 0V; +25°C
30
40
31
50
TCR
60
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
70
I
ZZ
80
Electrical Characteristics
90
©2003 Micron Technology, Inc. All rights reserved.
Typ
10
PAR = Full Array
PAR = 1/2 of Array
PAR = 1/4 of Array
PAR = 1/8 of Array
PAR = None of Array
Units
µA