MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 121

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 48:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Exit active power-
down to READ
command,
MR[12] = 0
Exit active power-
down to READ
command,
MR[12] = 1
Exit precharge
power-down to any
non-READ command
CKE MIN HIGH/LOW
time
Parameter
AC Characteristics
AC Operating Conditions for -3E, -3, -37E, and -5E Speeds (Sheet 6 of 6)
Notes: 1–5; notes appear on page 126; V
Symbol
t
t
XARDS
XARD
t
t
CKE
XP
7 - AL
Min
2
2
3
-3E
Max
DD
7 - AL
Min
Q = +1.8V ±0.1V, V
2
2
3
121
-3
Max
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6 - AL
Min
DD
2
2
3
512Mb: x4, x8, x16 DDR2 SDRAM
= +1.8V ±0.1V
-37E
Max
AC Operating Specifications
6 - AL
Min
2
2
3
©2004 Micron Technology, Inc. All rights reserved.
-5E
Max
Units Notes
t
t
t
t
CK
CK
CK
CK
32, 37
37
37
37