MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 73

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 55:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND 2
ADDRESS
BA0, BA1
DQS 3
ODT
DM 3
DQ 3
CK#
CKE
A10
R
CK
TT
Bank a
RESET Function
Col n
READ
T0
High-Z
High-Z
Notes:
NOP 1
T1
1. Either NOP or DESELECT command may be applied.
2. PRE = PRECHARGE command.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS rep-
4. Initialization timing is shown in Figure 7 on page 16.
5. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the com-
6. V
resents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the appropriate configu-
ration (x4, x8, x16).
pletion of the burst.
DD
, V
Bank b
Col n
READ
T2
DD
L, V
DD
Q, V
NOP 1
T3
Indicates a break in
time scale
D
TT
OUT
, and V
D
OUT
NOP 1
T4
REF
73
D
System
RESET
OUT
must be valid at all times.
t DELAY
Unknown
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
6
R
TT
ON
High-Z
High-Z
DON’T CARE
t CL
©2004 Micron Technology, Inc. All rights reserved.
t CK
Start of normal 4
initialization
t CL
sequence
NOP 1
Ta0
RESET Function
5
T = 400ns (MIN)
t CKE (MIN)
TRANSITIONING DATA
ALL BANKS
Tb0
PRE
High-Z
t RP
A