IC MOSFET DRVR DUAL SYNC 16-QFN

ISL6597CRZ

Manufacturer Part NumberISL6597CRZ
DescriptionIC MOSFET DRVR DUAL SYNC 16-QFN
ManufacturerIntersil
ISL6597CRZ datasheet
 


Specifications of ISL6597CRZ

ConfigurationHigh and Low Side, SynchronousInput TypeNon-Inverting
Delay Time18nsNumber Of Configurations2
Number Of Outputs4High Side Voltage - Max (bootstrap)36V
Voltage - Supply4.5 V ~ 5.5 VOperating Temperature0°C ~ 70°C
Mounting TypeSurface MountPackage / Case16-VQFN Exposed Pad, 16-HVQFN, 16-SQFN, 16-DHVQFN
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Peak-
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Data Sheet
Dual Synchronous Rectified MOSFET
Drivers
The ISL6597 integrates two ISL6596 drivers and is
optimized to drive two independent power channels in a
synchronous-rectified buck converter topology. These
drivers, combined with an Intersil multiphase PWM
controller, form a complete high efficiency voltage regulator
solution.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6597 features 4A typical sink current for the lower
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to
the high dV/dt of the switching node.
The ISL6597 also features an input that recognizes a high-
impedance state, working together with Intersil multi-phase
3.3V or 5V PWM controllers to prevent negative transients
on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
Ordering Information
PART
TEMP.
NUMBER
PART
RANGE
PACKAGE
(Note)
MARKING
(°C)
ISL6597CRZ
65 97CRZ
0 to +70 16 Ld 4x4 QFN L16.4x4
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
Features
• 5V Quad N-Channel MOSFET Drives for Two
Synchronous Rectified Bridges
• Adaptive Shoot-Through Protection
• Programmable Deadtime for Efficiency Optimization
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Tri-State Hold-Off Time (20ns)
• Low V
• Low Bias Supply Current
• Support 3.3V and 5V PWM Input
• Enable Input and Power-On Reset
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Utilization and Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile High Efficiency DC/DC
Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
PKG.
• Technical Brief TB389 “PCB Land Pattern Design and
(Pb-Free)
DWG. #
Surface Mount Guidelines for QFN (MLFP) Packages”
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
ISL6597
May 4, 2007
FN9165.1
Internal Bootstrap Diode
F
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006, 2007. All Rights Reserved

ISL6597CRZ Summary of contents

  • Page 1

    ... PART RANGE PACKAGE (Note) MARKING (°C) ISL6597CRZ 65 97CRZ 4x4 QFN L16.4x4 Add “-T” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations ...

  • Page 2

    Pinout Block Diagram VCC VCTRL 3.5K PWM1 3.5K EN CONTROL LOGIC VCTRL 3.5K PWM2 3.5K GND 2 ISL6597 ISL6597 (16 LD QFN) TOP VIEW GND 17 LGATE1 2 11 PGND PVCC ...

  • Page 3

    Typical Application - Multiphase Converter Using ISL6597 Gate Drivers COMP FB V VSEN CC ISEN1 PWM1 PGOOD EN PWM2 ISEN2 MAIN CONTROL ISL65xx VID ISEN3 FS/DIS PWM3 PWM4 GND ISEN4 3 ISL6597 BOOT1 +3.3V UGATE1 VCTRL PHASE1 +5V LGATE1 +3.3V ...

  • Page 4

    Absolute Maximum Ratings Supply Voltage (PVCC, VCC -0. Input Voltage ( ...

  • Page 5

    Electrical Specifications These specifications apply for T PARAMETER LGATE Fall Time UGATE Turn-Off Propagation Delay LGATE Turn-Off Propagation Delay UGATE Turn-On Propagation Delay LGATE Turn-On Propagation Delay Tri-state to UG/LG Rising Propagation Delay OUTPUT (Note 3) Upper Drive Source Resistance ...

  • Page 6

    Timing Diagram t PWM PDHU t PDLU t RU UGATE LGATE 1V t PDLL Operation and Adaptive Shoot-Through Protection Designed for high speed switching, the ISL6597 MOSFET driver controls both high-side and low-side N-Channel FETs from one externally provided PWM ...

  • Page 7

    ... PWM line of ISL6597 (assuming an Intersil PWM controller is used). Bootstrap Considerations This driver features an internal bootstrap diode. Simply adding an external capacitor across the BOOT and PHASE pins completes the bootstrap circuit. The following equation helps select a proper bootstrap capacitor size: Q GATE ≥ ...

  • Page 8

    PVCC BOOT HI1 LO1 G1 UGATE PHASE FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH PVCC C GD LGATE R G HI2 R R LO2 R GI2 G2 GND FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON ...

  • Page 9

    MOSFET to suppress the Miller coupling effect. The value of the resistor depends mainly on the input voltage’s rate of rise, the C /C ratio, as well as the gate-source GD GS threshold of the upper MOSFET. A higher ...

  • Page 10

    ... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...