AT90PWM1-16SU Atmel, AT90PWM1-16SU Datasheet - Page 235

MCU AVR 8K FLASH 16MHZ 24-SOIC

AT90PWM1-16SU

Manufacturer Part Number
AT90PWM1-16SU
Description
MCU AVR 8K FLASH 16MHZ 24-SOIC
Manufacturer
Atmel
Series
AVR® 90PWM Lightingr
Datasheet

Specifications of AT90PWM1-16SU

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
19
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
24-SOIC (7.5mm Width)
Processor Series
AT90PWMx
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
19
Number Of Timers
2
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRFBKIT, ATAVRISP2
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
For Use With
ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT90PWM1-16SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
22.9.2
22.9.3
4378C–AVR–09/08
Data Polling Flash
Data Polling EEPROM
When reading data from the AT90PWM1, data is clocked on the falling edge of SCK. See
22-11
To program and verify the AT90PWM1 in the serial programming mode, the following sequence
is recommended (See four byte instruction formats in
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Programming
3. The serial programming instructions will not work if the communication is out of synchro-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at a
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value 0xFF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value 0xFF, so when programming
this value, the user will have to wait for at least t
a chip-erased device contains 0xFF in all locations, programming of addresses that are meant to
contain 0xFF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is ready for
Apply power between V
tems, the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
Enable serial instruction to pin MOSI.
nization. When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
time by supplying the 6 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 8 MSB of
the address. If polling is not used, the user must wait at least t
next page. (See
write operation completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
no 0xFFs in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
for timing details.
CC
WD_EEPROM
power off.
Table
before issuing the next byte. (See
87.) Accessing the serial programming interface before the Flash
CC
and GND while RESET and SCK are set to “0”. In some sys-
Table 87
for t
WD_FLASH
WD_FLASH
Table
before programming the next page. As
Table
value.
88):
87.) In a chip erased device,
WD_FLASH
AT90PWM1
before issuing the
Figure
235

Related parts for AT90PWM1-16SU