S9S08DZ96F2MLF Freescale Semiconductor, S9S08DZ96F2MLF Datasheet - Page 70

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S9S08DZ96F2MLF

Manufacturer Part Number
S9S08DZ96F2MLF
Description
MCU 96K FLASH MASK AUTO 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of S9S08DZ96F2MLF

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Processor Series
S08D
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
6 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
87
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08DZ60
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Chapter 4 Memory
a burst program command is issued, the charge pump is enabled and remains enabled after completion of
the burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in
70
The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
MC9S08DZ128 Series Data Sheet, Rev. 1
Figure
4-12.
Freescale Semiconductor

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