DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 613
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 613 of 843
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18.11
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 18.16 to 18.18)
3. FWE application/disconnection
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with 128-kbyte
on-chip flash memory.
Do not apply a high level to the FWE pin until V
low before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery. Failure to do so may result in overprogramming or
overerasing due to MCU runaway, and loss of normal memory cell operation.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
• Apply FWE when the V
• Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
• In boot mode, apply and disconnect FWE during a reset.
If FWE is applied when the MCU’s V
MCU operation will be unstable and flash memory may be erroneously programmed or
erased.
time).
When V
settling time before applying FWE. Do not apply FWE when oscillation has stopped or is
unstable.
In a transition to boot mode, FWE = 1 input and MD
while the
programming setup time (t
transition from boot mode to another mode, also, a mode programming setup time is
necessary with respect to the reset release timing.
Flash Memory Programming and Erasing Precautions
CC
R E S
power is turned on, hold the
input is low. FWE and MD
CC
.
CC
MDS
voltage has stabilized within its rated voltage range.
) with respect to the reset release timing. When making a
CC
power, fix the FWE pin low and place the flash memory
CC
Section 18 Flash Memory [H8/3024F-ZTAT Version]
R E S
power supply is not within its rated voltage range,
2
–MD
pin low for the duration of the oscillation
CC
has stabilized. Also, drive the FWE pin
0
pin input must satisfy the mode
Rev. 2.00 Sep 20, 2005 page 573 of 800
2
–MD
0
setting should be performed
REJ09B0260-0200
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