DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 9
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Item
All
7.12.2 Register
Descriptions
Table 7.23 Port B
Pin Functions
(Modes 1 to 5)
Table 7.24 Port B
Pin Functions
(Modes 6 and 7)
18.5.1 Boot Mode 548
21.2.6 Flash
Memory
Characteristics
Table 21.19 Flash
Memory
Characteristics
Page
203, 204 Description amended
205, 206 PB
629, 630 Table amended and note added
Main Revisions for This Edition
Revision (See Manual for Details)
All references to Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and
other Hitachi brand names changed to Renesas Technology Corp.
Designation for categories changed from “series” to “group”
PB
Bits OIS3/2 and OS1/0 in 8TCSR3,
NDER11 in NDERB, and bit PB
follows.
PB
Bits OIS3/2 and OS1/0 in 8TCSR1,
NDER9 in NDERB, and bit PB
follows.
Bits OIS3/2 and OS1/0 in 8TCSR3,
and bit PB
PB
Bits OIS3/2 and OS1/0 in 8TCSR1,
and bit PB
Description amended
After the transfer is completed,
address (H'FFF520) of the programming control program area and
the programming control program execution state is entered (flash
memory programming/erasing can be performed).
Notes: 6. Minimum number of times at which all characteristics are
Item
Programming time*
Erase time*
Reprogramming count
Data retention period
3
1
3
1
/TP
/TP
/TP
/TP
1
11
9
11
9
*
7. Reference characteristics at 25 C. (This is an indication
8. Data retention characteristics when reprogramming is
/TMIO
/TMIO
3
/TMIO
/TMIO
*
5
3
1
guaranteed after reprogramming. (Reprogramming count
from 1 to minimum value is guaranteed.)
that reprogramming operations can normally be
performed up to this figure.)
performed correctly within the specification values,
including the minimum data retention period.
DDR select the pin function as follows.
DDR select the pin function as follows.
1
*
2
*
1
1
4
3
/
3
C S
/
C S
6
4
Rev. 2.00 Sep 20, 2005 page vii of xxxviii
Symbol Min
t
t
N
t
1
P
E
DRP
DDR select the pin function as
WEC
3
DDR select the pin function as
—
—
100*
10*
8
control branches to the start
6
Typ
10
100
10,000*
—
bit CS4E in CSCR, bit
bit CS6E in CSCR, bit
bit NDER11 in NDERB,
bit NDER9 in NDERB,
7
Max
200
—
—
1200
Unit
ms/
128 bytes
ms/block
Times
Years
Notes
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