DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 284

• Manufacturer Part Number: DF2378RVFQ34WV
• Description: MCU 3V 512K I-TEMP PB-FREE 144-L
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.7
In the H8S/2378R Group, external address space areas 2 to 5 can be designated as continuous
synchronous DRAM space, and synchronous DRAM interfacing performed. The synchronous
DRAM interface allows synchronous DRAM to be directly connected to this LSI. A synchronous
DRAM space of up to 8 Mbytes can be set by means of bits RMTS2 to RMTS0 in DRAMCR.
Synchronous DRAM of CAS latency 1 to 4 can be connected.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
6.7.1
Areas 2 to 5 are designated as continuous synchronous DRAM space by setting bits RMTS2 to
RMTS0 in DRAMCR. The relation between the settings of bits RMTS2 to RMTS0 and
synchronous DRAM space is shown in table 6.7. Possible synchronous DRAM interface settings
are and continuous area (areas 2 to 5).
Table 6.7
With continuous synchronous DRAM space, CS2, CS3, CS4 pins are used as RAS, CAS, WE
signal. The (OE) pin of the synchronous DRAM is used as the CKE signal, and the CS5 pin is
used as synchronous DRAM clock (SDRAMφ). The bus specifications for continuous
synchronous DRAM space conform to the settings for area 2. The pin wait and program wait for
the continuous synchronous DRAM are invalid.
Commands for the synchronous DRAM can be specified by combining RAS, CAS, WE, and
address-precharge-setting command (Precharge-sel) output on the upper column addresses.
Rev.7.00 Mar. 18, 2009 page 216 of 1136
REJ09B0109-0700
RMTS2
0
1
Synchronous DRAM Interface
Setting Continuous Synchronous DRAM Space
RMTS1
Relation between Settings of Bits RMTS2 to RMTS0 and Synchronous DRAM
Space
0
1
0
1
RMTS0
1
0
1
0
1
0
1
Normal space Normal space Normal space
Normal space Normal space
DRAM space
Area 5
Continuous synchronous DRAM space
Mode settings of synchronous DRAM
DRAM space
Reserved (setting prohibited)
Continuous DRAM space
Area 4
DRAM space
DRAM space
Area 3
DRAM space
DRAM space
DRAM space
Area 2