DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 902

• Manufacturer Part Number: DF2378RVFQ34WV
• Description: MCU 3V 512K I-TEMP PB-FREE 144-L
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 20 Flash Memory (0.35-μm F-ZTAT Version)
20.2
When the mode pins are set in the reset state and a reset-start is executed, this LSI enters an
operating mode as shown in figure 20.2. In user mode, flash memory can be read but not
programmed or erased.
The boot, user program and programmer modes are provided as modes to write and erase the flash
memory.
The differences between boot mode and user program mode are shown in table 20.1. Figure 20.3
shows boot mode. Figure 20.4 shows user program mode.
Rev.7.00 Mar. 18, 2009 page 834 of 1136
REJ09B0109-0700
Legend:
FLMCR1: Flash memory control register 1
FLMCR2: Flash memory control register 2
EBR1:
EBR2:
SYSCR:
Mode Transitions
Erase block register 1
Erase block register 2
System control register
FLMCR1
FLMCR2
SYSCR
EBR1
EBR2
Figure 20.1 Block Diagram of Flash Memory
Internal data bus (16 bits)
Internal address bus
Bus interface/controller
Flash memory
Operating
mode
Mode pins