UPD70F3736GK-GAK-AX Renesas Electronics America, UPD70F3736GK-GAK-AX Datasheet - Page 747
UPD70F3736GK-GAK-AX
Manufacturer Part Number
UPD70F3736GK-GAK-AX
Description
MCU 32BIT V850ES/JX3-L 80-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3-Lr
Datasheet
1.UPD70F3736GK-GAK-AX.pdf
(830 pages)
Specifications of UPD70F3736GK-GAK-AX
Package / Case
*
Voltage - Supply (vcc/vdd)
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Speed
20MHz
Number Of I /o
66
Core Processor
RISC
Program Memory Type
FLASH
Ram Size
16K x 8
Program Memory Size
256KB (256K x 8)
Data Converters
A/D 8x10b, D/A 1x8b
Oscillator Type
Internal
Peripherals
DMA, LVD, PWM, WDT
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Core Size
32-Bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Manufacturer
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Company:
Part Number:
UPD70F3736GK-GAK-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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28.5 Rewriting by Self Programming
28.5.1 Overview
memory by itself. By using this interface and a self programming library that is used to rewrite the flash memory with a
user application program, the flash memory can be rewritten by a user application transferred in advance to the
internal RAM or external memory. Consequently, the user program can be upgraded and constant data
rewritten in the field.
The V850ES/JF3-L supports a flash macro service that allows the user program to rewrite the internal flash
Note Be sure not to allocate the program code to the block where the constant data to be rewritten is allocated.
See 28.2 Memory Configuration for the block configuration.
Figure 28-15. Concept of Self Programming
Flash function execution Flash information
Preliminary User’s Manual U18952EJ1V0UD
Self programming library
CHAPTER 28 FLASH MEMORY
Flash macro service
Flash memory
Application program
Erase, write
Note
can be
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