MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 105

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MC68HC908AS60CFN

Manufacturer Part Number
MC68HC908AS60CFN
Description
IC MCU 60K FLASH 8MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908AS60CFN

Core Processor
HC08
Core Size
8-Bit
Speed
8.4MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
40
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 15x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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MC68HC908AS60 — Rev. 1.0
In general, all bits should be erased before being programmed.
However, if program/erase cycling is of concern, minimize bit cycling in
each EEPROM byte. If any bit in a byte requires change from a 0 to a 1,
the byte needs be erased before programming.
the conditions for erasing before programming
Freescale Semiconductor, Inc.
b. The EEPGM bit cannot be set if the EELAT bit is cleared and a
c. Any attempt to clear both EEPGM and EELAT bits with a single
EEPROM Data To Be
For More Information On This Product,
Table 7-1. EEPROM Program/Erase Cycling Reduction
non-EEPROM write has occurred. This is to ensure proper
erasing sequence. Once EEPGM is set, the type of erase mode
cannot be modified. If EEPGM is set, the onboard charge pump
generates the erase voltage and applies it to the user EEPROM
array. When the EEPGM bit is cleared, the erase voltage is
removed from the array and the internal charge pump is turned
off.
instruction will only clear EEPGM. This is to allow time for removal
of high voltage from the EEPROM array.
Programmed
Go to: www.freescale.com
0
0
1
1
EEPROM-2
EEPROM Data Before
Programming
0
1
0
1
Table 7-1
Programming?
Erase Before
Functional Description
Yes
No
No
No
summarizes
Technical Data
EEPROM-2

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