MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 423
MC68HC908AS60CFN
Manufacturer Part Number
MC68HC908AS60CFN
Description
IC MCU 60K FLASH 8MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68HC908AS60CFN.pdf
(454 pages)
Specifications of MC68HC908AS60CFN
Core Processor
HC08
Core Size
8-Bit
Speed
8.4MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
40
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 15x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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24.6 Control Timing
MC68HC908AS60 — Rev. 1.0
Low-voltage reset inhibit/recover hysteresis
POR rearm voltage (Note 7)
POR reset voltage (Note 8)
POR rise time ramp rate (Note 9)
High COP disable voltage (Note 10)
High FLASH block protect override (Note 11)
Bus operating frequency
RESET pulse width low
IRQ interrupt pulse width low (edge-triggered)
IRQ interrupt pulse period
16-bit timer (Note 2)
Notes:
Notes:
Input capture pulse width (Note 3)
Input capture period
10. See
11. See
1. V
2. The 2-bit timer prescaler is the limiting factor in determining timer resolution.
3. Refer to
4. The minimum period t
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
service routine plus 2 t
DD
minimum V
= 5.0 Vdc
14.9 COP Module During Break
Section 4. FLASH-1 Memory
Table 22-2. Mode, Edge, and Level Selection
DD
DD
is reached.
10%, V
Characteristic
Characteristic
is not reached before the internal POR reset is released, RST must be driven low externally until
TLTL
cyc
SS
.
or t
= 0 Vdc, T
Freescale Semiconductor, Inc.
ILIL
For More Information On This Product,
should not be less than the number of cycles it takes to execute the capture interrupt
and
A
= –40 C to +125 C, unless otherwise noted.
Interrupts. V
Go to: www.freescale.com
Section 5. FLASH-2 Memory
Electrical Specifications
HI
on RST pin.
and supporting note.
Symbol
V
t
Symbol
TH,
t
PORRST
t
V
R
f
t
TLTL
t
ILHI
Bus
H
ILIL
RL
V
V
POR
POR
LVI
t
HI
HI
TL
for further information. V
Note 4
Note 4
V
V
32 k
Min
1.5
1.5
DD
DD
0.02
2
Min
100
0
0
+ 2
+ 2
Electrical Specifications
8.4 M
Max
V
V
—
—
—
—
—
DD
DD
HI
Max
300
200
800
—
on IRQ pin.
+ 4
+ 4
Technical Data
Control Timing
Unit
t
t
t
t
Hz
V/ms
cyc
cyc
cyc
cyc
Unit
mV
mV
mV
V
V
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