FGH40N65UFDTU Fairchild Semiconductor, FGH40N65UFDTU Datasheet

IGBT 80A 650V TO-247

FGH40N65UFDTU

Manufacturer Part Number
FGH40N65UFDTU
Description
IGBT 80A 650V TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGH40N65UFDTU

Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
650V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 40A
Current - Collector (ic) (max)
80A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
80 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGH40N65UFDTU
Manufacturer:
FSC
Quantity:
5 000
©2008 Fairchild Semiconductor Corporation
FGH40N65UFD Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGH40N65UFD
650V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
=1.8V @ I
E
COLLECTOR
Description
C
(FLANGE)
Parameter
G
C
= 40A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Solar Inverter, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
± 20
650
120
290
300
116
80
40
Max.
0.43
1.45
C
E
40
March 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGH40N65UFDTU Summary of contents

Page 1

... R (Diode) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGH40N65UFD Rev. A1 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for = 40A C Solar Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGH40N65UFD FGH40N65UFDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES ∆BV Temperature Coefficient of Breakdown CES ∆T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH40N65UFD Rev 25°C unless otherwise noted C Test Conditions ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 15V 20V 100 0.0 1.5 3.0 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V = ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 80A 40A 20A Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 5000 4000 C iss 3000 C oss 2000 1000 ...

Page 6

Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 5500 Common Emitter V = 400V 15V 40A C o 1000 125 C C 100 10 ...

Page 7

Typical Performance Characteristics Figure 19. Forward Characteristics 125 0 Forward Voltage, V Figure 21. Stored Charge 100 µ 200A ...

Page 8

Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH40N65UFD Rev Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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