FGH40N65UFDTU Fairchild Semiconductor, FGH40N65UFDTU Datasheet - Page 5

• Manufacturer Part Number: FGH40N65UFDTU
• Description: IGBT 80A 650V TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N65UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 650V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N65UFD Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
5000
4000
3000
2000
1000
0.01
400
100
0.1
20
16
12
10
0
8
4
0
1
0.1
4
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
I
Gate-Emitter Voltage, V
C
40A
= 20A
8
C
C
C
iss
oss
10
rss
1
12
80A
Common Emitter
V
T
GE
C
Common Emitter
T
100
C
= 25
GE
= 0V, f = 1MHz
= 25
CE
GE
16
o
[V]
CE
[V]
C
o
10
C
[V]
100
10 ms
1ms
10
DC
µ
µ
s
s
1000
20
30
5
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
100
200
20
16
12
15
12
Figure 12. Turn-on Characteristics vs.
10
8
4
0
9
6
3
0
0
4
0
Common Emitter
T
C
= 25
o
C
10
I
Gate-Emitter Voltage, V
C
40A
= 20A
8
t
t
r
d(on)
Gate Resistance, R
Gate Charge, Q
V
50
cc
= 100V
20
Gate Resistance
12
80A
Common Emitter
V
I
T
T
C
C
C
CC
30
= 40A
g
300V
= 25
= 125
100
[nC]
= 400V, V
Common Emitter
T
G
C
o
GE
[ Ω ]
= 125
C
o
C
16
[V]
200V
40
o
GE
C
= 15V
GE
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150
20
50