FGH40N65UFDTU Fairchild Semiconductor, FGH40N65UFDTU Datasheet - Page 6

• Manufacturer Part Number: FGH40N65UFDTU
• Description: IGBT 80A 650V TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N65UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 650V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N65UFD Rev. A1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
1000
5500
100
100
600
0.1
10
10
10
1
20
20
0
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
Common Emitter
V
T
T
C
C
CC
C
C
GE
C
C
= 40A
GE
Gate Resistance
= 25
= 125
Collector Current
= 25
= 125
= 25
= 125
= 400V, V
= 15V, R
= 15V, R
o
10
o
o
C
o
C
o
C
o
C
C
C
Gate Resistance, R
Collector Current, I
Collector Current, I
G
GE
G
= 10
= 10
40
40
= 15V
20
Ω
Ω
30
G
C
60
60
[
C
[A]
t
Ω
d(off)
[A]
]
t
f
40
t
t
d(off)
f
E
E
on
off
50
80
80
6
Figure 16. Switching Loss vs. Gate Resistance
Figure 18. Turn off Switching
Figure 14. Turn-on Characteristics vs.
200
100
100
500
0.3
10
10
10
1
1
20
0
1
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
Safe Operating Area
V
C
C
CC
C
C
GE
= 40A
GE
= 25
= 125
= 25
= 125
= 400V, V
= 15V, R
= 15V, T
Collector-Emitter Voltage, V
o
o
10
C
C
o
o
C
C
Collector Current, I
Gate Resistance, R
G
Collector Current
C
GE
= 10
10
40
= 125
= 15V
SOA Characteristics
20
Ω
o
C
30
100
C
60
G
[A]
[
E
Ω
off
]
CE
E
on
40
[V]
t
d(on)
t
www.fairchildsemi.com
r
1000
50
80