FGH40N65UFDTU Fairchild Semiconductor, FGH40N65UFDTU Datasheet - Page 3

• Manufacturer Part Number: FGH40N65UFDTU
• Description: IGBT 80A 650V TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N65UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 650V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N65UFD Rev. A1
Electrical Characteristics of the Diode
V
t
Q
Symbol
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
I
I
F
ES
= 20A
=20A, dI
Test Conditions
ES
T
/dt = 200A/µs
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
C
C
C
o
o
o
C
C
C
Min.
-
-
-
-
-
-
Typ.
1.95
1.85
140
375
45
75
Max
2.6
www.fairchildsemi.com
-
-
-
-
-
Units
nC
ns
V