FGH40N65UFDTU Fairchild Semiconductor, FGH40N65UFDTU Datasheet - Page 7

• Manufacturer Part Number: FGH40N65UFDTU
• Description: IGBT 80A 650V TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N65UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 650V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N65UFD Rev. A1
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Stored Charge
100
0.2
80
10
80
60
40
20
1
0
5
T
10
J
= 125
di/dt = 100A/
200A/
1
Forward Current, I
Forward Voltage, V
o
C
1E-3
0.01
µ
0.1
s
1
1E-5
T
20
J
T
single pulse
= 75
0.02
0.01
J
µ
0.05
Figure 23.Transient Thermal Impedance of IGBT
0.5
0.2
0.1
s
2
= 25
o
C
o
C
F
F
[A]
[V]
T
T
T
30
1E-4
C
C
C
3
= 25
= 75
= 125
o
o
C
C
o
C
Rectangular Pulse Duration [sec]
40
4
1E-3
7
0.01
200
100
Figure 20. Typical Reverse Current vs.
0.1
10
60
50
40
30
Figure 22. Reverse Recovery Time
0.01
1
50
5
di/dt = 100A/
Peak T
Duty Factor, D = t1/t2
10
P
DM
200
j
Forward Current, I
Reverse Voltage, V
= Pdm x Zthjc + T
0.1
µ
t
s
1
t
Reverse Voltage
2
20
T
T
T
200A/
J
J
J
= 25
= 125
= 75
C
400
µ
o
s
o
C
F
o
C
1
R
[A]
C
[V]
30
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600
40