IGW25T120 Infineon Technologies, IGW25T120 Datasheet
IGW25T120
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IGW25T120 Summary of contents
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... Power Semiconductors ® TrenchStop Series ® and Fieldstop technology CE(sat) http://www.infineon.com/igbt/ T Marking CE(sat),Tj=25°C j,max 1.7V G25T120 150°C Symbol jmax IGW25T120 PG-TO-247-3 Package PG-TO-247-3 Value Unit 1200 ±20 V µs 10 190 W -40...+150 °C -55...+150 260 Rev. 2.4 Nov. 09 ...
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... 1mA , 1200V , 25° 0° 20V 25A 25V 0V 60V 25A ≤10µ 5V 600V 25° IGW25T120 Max. Value Unit 0.65 K/W 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 2.2 - 5.0 5 600 Ω - 1860 - 155 - 150 - A Rev. 2.4 Nov. 09 ...
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... Symbol Conditions 0° 00V 25A 5V 22Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ 3 IGW25T120 Value Unit min. typ. max 560 - - 2 2 4.2 - Value Unit min. typ. max 660 - ...
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... Figure 2. Safe operating area ( ≤150°C;V = 600V 40A 30A 20A 10A 0A 25°C 125° Figure 4. Collector current as a function of case temperature ( IGW25T120 t =3µs p 10µs 50µs 150µs 500µs 20ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 125°C ...
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... T , JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGW25T120 EMITTER VOLTAGE I =50A C I =25A C I =15A C I =8A C 0°C 50°C 100°C Rev. 2.4 Nov. 09 ...
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... T =22Ω Dynamic test circuit in Figure 150°C -50°C 0° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 1.0mA) C =22Ω IGW25T120 t d(off d(on 15Ω 25Ω 35Ω 45Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =25A max. typ. min. 50°C 100° ...
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... E * 1mJ on 0mJ 150°C 400V 500V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T =22Ω Dynamic test circuit in Figure E) 7 IGW25T120 include losses off 15Ω 25Ω 35Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =25A, ...
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... GE 200A 150A 100A 50A 0A 16V 12V V GE Figure 20. Typical short circuit collector current as a function of gate- =25°C) emitter voltage IGW25T120 C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) 14V 16V 18V , - GATE EMITTETR VOLTAGE ≤ 600V, T ≤ 150°C) j Rev ...
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... I C 20A 20A 0us 0.5us 1.5us Figure 22. Typical turn off behavior = 150° Dynamic test circuit in Figure E) τ 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.52* τ 100ms 9 IGW25T120 600V 400V 200V 0V 1us 1.5us t, TIME =15/0V, R =22Ω 150° Rev. 2.4 Nov. 09 ...
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... Power Semiconductors ® TrenchStop Series 10 IGW25T120 Rev. 2.4 Nov. 09 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity C 11 IGW25T120 τ τ =180nH σ =39pF. σ Rev. 2.4 Nov. 09 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 12 IGW25T120 Rev. 2.4 Nov. 09 ...