IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 9

• Manufacturer Part Number: IGW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
GE
0.5us
100µs
0.01
single pulse
0.02
=0/15V, R
t
p
P
/ T)
,
PULSE WIDTH
t,
1ms
TIME
1us
R
0.229
0.192
0.174
0.055
G
R , ( K / W )
1
C
=22Ω, T
1
=
τ
10ms
1
/ R
1
1.5us
j
C
= 150°C,
1.10*10
1.56*10
1.35*10
1.52*10
2
=
100ms
τ
τ
, ( s )
2
/ R
TrenchStop
R
2
-1
-2
-3
-4
2
60A
40A
20A
0A
9
Figure 22. Typical turn off behavior
60A
40A
20A
0A
®
0us
Series
V
I
C
CE
(V
Dynamic test circuit in Figure E)
0.5us
GE
=15/0V, R
t,
1us
TIME
IGW25T120
G
=22Ω, T
Rev. 2.4
1.5us
j
= 150°C,
Nov. 09
600V
400V
200V
0V