IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 4

IGBT 1200V 50A 190W TO247-3

IGW25T120

Manufacturer Part Number
IGW25T120
Description
IGBT 1200V 50A 190W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW25T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
190W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW25T120
Manufacturer:
FUJI
Quantity:
8 000
Part Number:
IGW25T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
150W
100W
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
0A
50W
0W
10Hz
25°C
switching frequency
(T
V
case temperature
(T
100Hz
f,
T
GE
T
50°C
j
j
T
C
SWITCHING FREQUENCY
≤ 150°C, D = 0.5, V
≤ 150°C)
C
=110°C
C
,
= 0/+15V, R
I
=80°C
I
c
c
CASE TEMPERATURE
1kHz
75°C
G
= 22Ω)
100°C
10kHz
CE
= 600V,
125°C
100kHz
TrenchStop
4
Figure 2. Safe operating area
Figure 4. Collector current as a function of
®
0,1A
40A
30A
20A
10A
10A
0A
1A
Series
25°C
1V
V
CE
(D = 0, T
T
case temperature
(V
,
j
COLLECTOR
T
≤150°C;V
GE
C
,
≥ 15V, T
10V
CASE TEMPERATURE
C
= 25°C,
75°C
GE
-
EMITTER VOLTAGE
j
IGW25T120
=15V)
≤ 150°C)
100V
Rev. 2.4
1000V
125°C
t
150µs
500µs
p
Nov. 09
20ms
DC
=3µs
50µs
10µs

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